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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G
Vorlaufige Daten / Preliminary Data
Wesentliche Merkmale * Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED(R) Gehause * Chipgroe 300 x 300 m2 * Emissionswellenlange: 950 nm * GaAs-LED mit sehr hohem Wirkungsgrad * Gute Linearitat (Ie = f [IF]) bei hohen Stromen * Gleichstrom- oder Impulsbetrieb moglich * Hohe Zuverlassigkeit * Hohe Impulsbelastbarkeit Anwendungen von Fernseh-, Rundfunkund Videogeraten, Lichtdimmern * Geratefernsteuerungen fur Gleich- und Wechsellichtbetrieb * Lichtschranken bis 500 kHz * Sensorik *
IIR-Fernsteuerung
Features * Typ. total radiant power: 24 mW @ 100 mA in TOPLED(R) package. * Chip size 300 x 300 m2 * Peak wavelength: 950 nm * Very highly efficient GaAs LED * Good linearity (Ie = f [IF]) at high currents * DC or pulsed operations are possible * High reliability * High pulse handling capability Applications * IR remote control for hifi and TV sets, video tape recorder, dimmers * Remote control for steady and varying intensity * Light-reflection switches (max. 500 kHz) * Sensor technology
Typ Type F 0118G
Bestellnummer Ordering Code Q65110A0136
Beschreibung Description Infrarot emittierender Chip, Oberseite Anodenanschlu, Infrared emitting die, top side anode connection
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F 0118G
Elektrische Werte (TA = 25 C) Electrical values1) (TA = 25 C) Bezeichnung Parameter Emissionswellenlange Peak wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 10 mA Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Sperrspannung Reverse voltage IR = 1A Durchlaspannung Forward voltage IF = 100 mA Strahlungsleistung Radiant Power3) IF = 100 mA Photostrom (Spezifikationsparameter Helligkeit) Photocurrent (specified parameter brightness) IF = 100 mA
1)
Symbol Symbol min. peak
Wert Value2) typ. 950 max.
Einheit Unit nm
55
nm
tr, tf
0.5/0.4
s
VR
5
V
VF
1.4
1.6
V
e
12
mW
Ie
0.65
a.u.
Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one chip per 2 cm. If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample fails in that measurement, an area of 0,5 cm around each failed sample is marked by pen. All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value Radiant power is measured on TO-18 header in integrating sphere.
2)
3)
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F 0118G
Mechanische Werte Mechanical values Bezeichnung Parameter Chipkantenlange (x-Richtung) Length of chip edge (x-direction) Chipkantenlange (y-Richtung) Length of chip edge (y-direction) Durchmesser des Wafers Diameter of the wafer Chiphohe Die height Bondpaddurchmesser Diameter of bondpad Weitere Informationen Additional information2) Vorderseitenmetallisierung Metallization frontside Ruckseitenmetallisierung Metallization backside Trennverfahren Dicing Verbindung Chip - Trager Die bonding
1)
Symbol Symbol min. 0.28 0.28
Wert Value1) typ. 0.30 0.30 76.2 165 185 135 205 max. 0.32 0.32
Einheit Unit mm mm mm m m
Lx Ly D H
d
Aluminium Aluminum Goldlegierung Gold alloy Sagen Sawing Kleben Epoxy bonding
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection A63501-Q0013-N001-*-76G3: The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The visual inspection of chip backside is performed by eye for 100% of the area of each wafer. If decisions (good/bad) are not possible additional a stereo microscope with incident light with 40x-80x magnification is used. Areas greater than 1/4 cm which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of each wafer. Areas greater than 1 cm which have an amount of more than 50% failed dies and areas greater than 2 cm which have an amount of more than 25% failed dies will be marked. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM after the final visual inspection is not installed.
2)
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F 0118G
fj
Grenzwert1) Maximum Ratings Bezeichnung Parameter Maximaler Betriebstemperaturbereich Maximum Operating temperature range Maximaler Lagertemperaturbereich Maximum storage temperature range Maximaler Durchlastrom Maximum forward current Maximaler Stostrom Maximum surge current tp = 10 s, D = 0.005 Maximale Sperrschichttemperatur Maximum junction temperature
1)
Symbol Symbol Top Tstg IF IS
Wert Value -40...+85 -40...+85 100 3
Einheit Unit C C mA A
Tj
125
C
Maximum ratings are strongly package dependent and may differ between different packages. The values given represent the chip in a TO-18 package.
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F 0118G
Relative Spectral Emission1) IFrel= f () TA = 25 C
100 %
OHR01938
Radiant Intensity1) Ie/Ie(100mA) = f (IF) TA = 25 C, single pulse: tp = 20 s
10 2 A
OHR01551
rel
e e 100 mA
80
10 1
60
10 0
40
10 -1
20
0 880
920
960
1000
nm
1060
10 -2 10 -3
10 -2
10 -1
10 0 A F
10 1
Forward Current1) IF= f (VF), Single pulse, tp = 20 s, TA = 25 C
10 1
OHR01554
Permissible Pulse Power1) Duty cycle D = parameter, TA = 25 C
10 4
OHR00860
F
A
F mA 5
D = 0.005 0.01
tp tp D= T T
F
10 0
0.02
10 -1
10 3
0.1 0.2
0.05
5
10 -2
0.5
10 -3
0
1
2
3
4
5
6
V VF
8
DC 10 2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp
1) Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductor's TOPLED(R) package.
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F 0118G
Mazeichnung Chip Outlines
0.135 (0.0053)
0.3 (0.0118)
p-contact
0.185 (0.0073)
n-contact
GMOY6078
Mae werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information generally describes the type of component and shall not be considered as assured characteristics or detailed specification. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our sales organization. Handling and Storage Conditions: The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom environment only. Customer has to follow the according rules for disposition of material that can be hazardous for humans and environment. Packing Chips are placed on a blue foil, which is fixed in a yellow frame of 5" diameter. For shipment the wafers of a shipment lot are arranged to stacks. The top and bottom of the stack is covered by a dummy disk to protect the top and bottom wafer from damage. The whole package is fixed by rubber strings and hermetically sealed in a plastic bag for storage and shipment. Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Further Conditions: If not otherwise arranged, the "General Conditions for the supply of products and services of the electrical and electronics industry" apply for any shipment, just as the Supplier Addendum " Chip business" to the "General Conditions for the supply of products and services of the electrical and electronics industry". If this document is not familiar to you, please request it at our nearest sales office. Components used in life-support devices or systems must be expressly authorized by us for such purpose! Critical components2), may only be used in life-support devices or systems3) with the express written approval of OSRAM OS.
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value. 2) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 3) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
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